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FDP55N06/FDPF55N06 60V N-Channel MOSFET
UniFET
FDP55N06/FDPF55N06
60V N-Channel MOSFET Features
* * * * * * 55A, 60V, RDS(on) = 0.022 @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
D
G GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
FDP55N06 60 55 34.8 220 25
(Note 2) (Note 1) (Note 1) (Note 3)
FDPF55N06 55 * 34.8 * 220 * 480 55 11.4 4.5
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
114 0.9 -55 to +150 300
48 0.4
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RJS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDP55N06 1.1 0.5 62.5 FDPF55N06 2.58 -62.5 Units C/W C/W C/W
(c)2005 Fairchild Semiconductor Corporation
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FDP55N06/FDPF55N06 Rev. A
FDP55N06/FDPF55N06 60V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP55N06 FDPF55N06
Device
FDP55N06 FDPF55N06
Package
TO-220 TO-220F
TC = 25C unless otherwise noted
Reel Size
Tape Width
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 150C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 27.5 A VDS = 25 V, ID = 27.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz
(Note 4)
Min
60 -----2.0 ------
Typ
-0.05 -----0.018 33 1160 375 60
Max Units
--1 10 100 -100 4.0 0.022 -1510 490 90 V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 30 V, ID = 55 A, RG = 25 ---(Note 4, 5)
30 130 70 95 30 6.5 7.5 ---40 55
65 265 150 195 37 ---
----
VDS = 48 V, ID = 55A, VGS = 10 V
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 55 A VGS = 0 V, IS = 55 A, dIF / dt = 100 A/s
(Note 4)
------
55 220 1.4 ---
A A V ns C
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.6mH, IAS = 55A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 55A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FDP55N06/FDPF55N06 Rev. A
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FDP55N06/FDPF55N06 60V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
VGS
10
2
ID, Drain Current [A]
ID, Drain Current [A]
15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
Top :
10
2
150 C
o
10
1
10
1
25 C
o
-55 C
o
10
0
* Notes : 1. 250s Pulse Test o 2. TC = 25 C
-1
* Notes : 1. VDS = 30V 2. 250s Pulse Test
10
10
0
10
1
10
0
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.05
10
2
RDS(ON) [O ], Drain-Source On-Resistance
0.04
IDR, Reverse Drain Current [A]
0.03
10
1
150 C
o
VGS = 10V VGS = 20V
0.02 * Note : TJ = 25 C 0 25 50 75 100 125 150 175 200
o
25 C
o
* Notes : 1. VGS = 0V 2. 250s Pulse Test 10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd 2000
Figure 6. Gate Charge Characteristics
12
VGS, Gate-Source Voltage [V]
Coss Ciss
Crss = Cgd
10
Capacitances [pF]
8
VDS = 30V VDS = 48V
1500
6
1000
* Note : 1. VGS = 0 V
4
500
Crss
2. f = 1 MHz
2 * Note : ID = 55A 0 0 5 10 15 20 25 30
0 -1 10
10
0
10
1
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDP55N06/FDPF55N06 Rev. A
3
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FDP55N06/FDPF55N06 60V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
3.0
Figure 8. On-Resistance Variation vs. Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0 * Notes : 1. VGS = 10 V 2. ID = 27.5 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FDP55N06
10
3
Figure 9-2. Maximum Safe Operating Area for FDPF55N06
10
3
10 s
10
2
10 s
10
2
100 s
100 s 1 ms 10 ms 100 ms
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
10
1
DC
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
1 ms 10 ms
10
1
DC
10
0
10
0
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-2
10
0
10
1
10
2
10
-2
10
0
10
1
10
2
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
60
50
ID, Drain Current [A]
40
30
20
10
0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
FDP55N06/FDPF55N06 Rev. A
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FDP55N06/FDPF55N06 60V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP55N06
10
0
(t), Thermal Response
D=0.5 0.2
-1
10
0.1 0.05 0.02 0.01 single pulse
* Notes : o 1. Z ? JC (t) = 1.1 C/W M ax. 2. Duty Factor, D=t 1/t 2 3. T JM - T C = P DM * Z ? 10
-2 JC
Z?
JC
10
-2
(t)
10
-5
10
-4
10
-3
10
-1
10
0
10
1
t 1 , Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF55N06
D =0.5
(t), Thermal Response
10
0
0.2 0.1
10
-1
0.05 0.02 0.01
* N otes : o 1. Z ? JC (t) = 2.58 C /W M ax. 2. D uty F actor, D = t 1 /t 2
Z?
JC
10
-2
single pulse
3. T JM - T C = P D M * Z ?
JC
(t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q uare W ave P ulse D uration [sec]
FDP55N06/FDPF55N06 Rev. A
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FDP55N06/FDPF55N06 60V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP55N06/FDPF55N06 Rev. A
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FDP55N06/FDPF55N06 60V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP55N06/FDPF55N06 Rev. A
7
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FDP55N06/FDPF55N06 60V N-Channel MOSFET
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDP55N06/FDPF55N06 Rev. A
8
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FDP55N06/FDPF55N06 60V N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
FDP55N06/FDPF55N06 Rev. A
9
15.87 0.20
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16

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